Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa
نویسندگان
چکیده
Real time changes of the GaAs band structure were determined using time-resolved photoluminescence PL spectroscopy, with nanosecond resolution, in single-event continuous compression experiments. Continuous compression to 5 GPa over 150 ns was achieved by impacting fused silica buffers preceding the GaAs crystals. PL spectra and compression wave profiles were measured simultaneously for uniaxial strain compression along the 100 orientation. Below 3 GPa, PL peaks from Te donors and Zn acceptors showed a blueshift upon compression, consistent with a widening of the band gap. At 3 GPa, the PL intensity decreased abruptly, due to a direct-to-indirect transition. © 2009 American Institute of Physics. doi:10.1063/1.3247886
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